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High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition

McDonnell, Stephen and Brennan, Barry and Hughes, Greg (2009) High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition. Applied Physics Letters, 95 (7). 0729031-0729033. ISSN 0003-6951

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We report on an in situ high resolution core level photoemission study of the early stages of interface formation between an ultrathin SiOx layer ( ∼ 0.3 nm) grown on the atomically clean Si(111) surface and a HfO2 dielectric layer. Si 2p core level spectra acquired at 130 eV photon energy reveal evidence of a chemically shifted component on the lower binding energy side of the substrate peak which is attributed to interface defect states resulting from the incorporation of silicon atoms from the substrate into the interfacial oxide at room temperature. This evidence of Si/SiOx interface disruption would be expected to increase charge carrier scattering mechanisms in the silicon and contribute to the generally observed mobility degradation in high-k stacks with ultrathin silicon oxide interface layers.

Item Type:Article (Published)
Uncontrolled Keywords:binding energy; carrier mobility; defect states; hafnium compounds; high-k dielectric thin films; interface phenomena; photoelectron spectra; silicon; silicon compounds;
Subjects:Physical Sciences > Thin films
Physical Sciences > Physics
DCU Faculties and Centres:Research Initiatives and Centres > National Centre for Plasma Science and Technology (NCPST)
DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:
Copyright Information:© 2009 American Institute of Physics
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders:Science Foundation Ireland
ID Code:15581
Deposited On:28 Jul 2010 14:10 by DORAS Administrator. Last Modified 11 Aug 2010 11:28

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