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Electrical characterization of the soft breakdown failure mode in MgO layers

Miranda, E. and O’Connor, E. and Cherkaoui, K. and Monaghan, S. and Long, R. and O’Connell, D. and Hurley, P. K. and Hughes, Greg and Casey, Patrick (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. Applied Physics Letters, 95 (1). 012901-1-012901-3. ISSN 0003-6951

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Abstract

The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V) characteristics follow the power-law model I = aVb typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO2. The relationship between the magnitude of the current and the normalized differential conductance was analyzed.

Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:dielectric thin films; electric breakdown; electrical conductivity; magnesium compounds;
Subjects:Physical Sciences > Thin films
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.3167827
Copyright Information:© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Funders:Science Foundation Ireland
ID Code:15589
Deposited On:03 Aug 2010 14:22 by DORAS Administrator. Last Modified 03 Aug 2010 14:22

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