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Indium stability on InGaAs during atomic H surface cleaning

Aguirre-Tostado, F. S. and Milojevic, M. and Hinkle, C. L. and Vogel, E. M. and Wallace, R. M. and McDonnell, Stephen and Hughes, Greg (2008) Indium stability on InGaAs during atomic H surface cleaning. Applied Physics Letters, 92 (17). 171906-1-171906-3. ISSN 0003-6951

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Atomic H exposure of a GaAs surface at 390 °C is a relatively simple method for removing the native oxides without altering the surface stoichiometry. In-situ reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to show that this procedure applied to In0.2Ga0.8As effectively removes the native oxides resulting in an atomically clean surface. However, the bulk InGaAs stoichiometry is not preserved from this treatment. The In:Ga ratio from the substrate is found to decrease by 33%. The implications for high-mobility channel applications are discussed as the carrier mobility increases nearly linearly with the In content.

Item Type:Article (Published)
Uncontrolled Keywords:carrier mobility; gallium arsenide; III-V semiconductors; indium compounds; reflection high energy electron diffraction; stoichiometry; surface cleaning; X-ray photoelectron spectra;
Subjects:Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:
Copyright Information:© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Funders:Science Foundation Ireland
ID Code:15593
Deposited On:03 Aug 2010 14:56 by DORAS Administrator. Last Modified 03 Aug 2010 14:56

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