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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Hinkle, C. L. and Sonnet, A. M. and Vogel, E. M. and McDonnell, Stephen and Hughes, Greg and Milojevic, M. and Lee, B. and Aguirre-Tostado, F. S. and Choi, K. J. and Kim, J. and Wallace, R. M. (2007) Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation. Applied Physics Letters, 91 (16). 163512-1-163512-3. ISSN 0003-6951

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Abstract

The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion. In situ deposition and analysis techniques were used to study different surface preparations, including NH4OH, Si-flux, and atomic hydrogen exposures, as well as Si passivation depositions prior to in situ atomic layer deposition of Al2O3. As–O bonding was removed and a bond conversion process with Si deposition is observed. The accumulation capacitance frequency dispersion was removed only when a Si interlayer and a specific surface clean were combined.

Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:bonds (chemical); capacitance; elemental semiconductors; gallium arsenide; III-V semiconductors; passivation; silicon; surface cleaning;
Subjects:Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.2801512
Copyright Information:© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Funders:Science Foundation Ireland
ID Code:15595
Deposited On:03 Aug 2010 15:04 by DORAS Administrator. Last Modified 03 Aug 2010 15:04

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