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Anomalous behavior of the near-threshold photoionization cross section of the neon isoelectronic sequence: a combined experimental and theoretical study

Chakraborty, H. and Gray, A. and Costello, John T. and Deshmukh, P. and Haque, G. and Kennedy, Eugene T. and Manson, S. and Mosnier, Jean-Paul (1999) Anomalous behavior of the near-threshold photoionization cross section of the neon isoelectronic sequence: a combined experimental and theoretical study. Physical Review Letters, 83 (11). pp. 2151-2154. ISSN 0031-9007

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Abstract

We present a combined theoretical and experimental investigation of photoionization along the Ne isoelectronic sequence and show that the near-threshold behavior of the cross section for Si4+ differs radically from the nearby ions in the sequence. We demonstrate that the general nature of the underlying physics implies that dramatic changes in near-threshold behavior may be expected for many other ions.

Item Type:Article (Published)
Refereed:Yes
Subjects:Physical Sciences > Physics
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:The American Physical Society
Official URL:http://dx.doi.org/10.1103/PhysRevLett.83.2151
Copyright Information:© 1999 The American Physical Society
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders:Enterprise Ireland
ID Code:15611
Deposited On:05 Aug 2010 16:34 by DORAS Administrator. Last Modified 05 Aug 2010 16:34

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