Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities
Folliot, H. and Lynch, Michael and Bradley, Ann Louise and Dunbar, L.A. and Hegarty, J. and Donegan, John Francis and Barry, Liam P. and Roberts, J.S. and Hill, G. (2002) Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities. Applied Physics Letters, 80 (8). pp. 1328-1330. ISSN 0003-6951
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We report on two-photon absorption (TPA) photocurrent in semiconductor microcavities. We experimentally show a substantial increase in the TPA photocurrent generated, at resonance, in a GaAlAs/GaAs microcavity designed for TPA operation at ~890 nm. An enhancement factor of ~12 000 of the photocurrent is obtained via the microcavity effect, which could have an important impact on the use of TPA devices for high speed switching and sampling applications. Our results also show the implications of the cavity photon lifetime on autocorrelation traces measured using TPA in semiconductor microcavities.
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