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Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities

Folliot, H. and Lynch, Michael and Bradley, Ann Louise and Dunbar, L.A. and Hegarty, J. and Donegan, John Francis and Barry, Liam P. and Roberts, J.S. and Hill, G. (2002) Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities. Applied Physics Letters, 80 (8). pp. 1328-1330. ISSN 0003-6951

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Abstract

We report on two-photon absorption (TPA) photocurrent in semiconductor microcavities. We experimentally show a substantial increase in the TPA photocurrent generated, at resonance, in a GaAlAs/GaAs microcavity designed for TPA operation at ~890 nm. An enhancement factor of ~12 000 of the photocurrent is obtained via the microcavity effect, which could have an important impact on the use of TPA devices for high speed switching and sampling applications. Our results also show the implications of the cavity photon lifetime on autocorrelation traces measured using TPA in semiconductor microcavities.

Item Type:Article (Published)
Refereed:Yes
Subjects:Engineering > Optical communication
Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.1455694
Copyright Information:©2002 American Institute of Physics.
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:158
Deposited On:22 Jan 2008 by DORAS Administrator. Last Modified 02 Feb 2009 11:53

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