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Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper

Vijayaraghavan, Rajani K. (2012) Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper. Materials Letters, 71 . pp. 160-163. ISSN 0167-577X

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Abstract

We report on the direct formation of phase pure nanocrystalline cuprous oxide (Cu2O) film with band gap ~ 2 eV by microwave plasma oxidation of pulsed dc magnetron sputtered Cu films and the highly controlled oxidation of Cu in to Cu2O and CuO phases by controlling the plasma exposure time. The structural, morphological and optoelectronic properties of the films were investigated. p-type Cu2O film with a grain size ~20-30 nm, resistivity of ~66 Ω cm and a hole concentration of ~2×1017 cm-3 is obtained for a plasma exposure time of 10 min without using any foreign dopants. The optical absorption coefficient (~105 cm-1) of the Cu2O film is also reported.

Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:semiconductors; solar energy materials; oxidation
Subjects:Engineering > Materials
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Biomedical Diagnostics Institute (BDI)
DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:Elsevier
Official URL:http://dx.doi.org/10.1016/j.matlet.2011.12.044
Copyright Information:© 2012 Elsevier
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders: This project was funded by the SFI Research Frontiers Programme, the Enterprise Ireland Commercialization Fund for Technology Development and partially supported by the Irish Higher Education Authority PRTLI "INSPIRE" project and the SFI "Precision" Stra
ID Code:17854
Deposited On:04 Mar 2013 11:52 by Rajani K.V. . Last Modified 13 Oct 2016 15:41

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