We report on the use of Zn as an n-type dopant in CuCl thin films for optoelectronic applications, wherein maximum n-type doping of the order of 1018 cm -3 has been achieved. Zn doped nanocrystalline CuCl thin films are successfully deposited on glass and Si substrates by pulsed dc magnetron sputtering. Structural and morphological properties are investigated using X-ray diffraction (XRD) studies and Scanning Electron Microscopy (SEM), respectively. The conductivity of the CuCl:Zn films is examined using the four point probe technique. An order of magnitude increase in the conductivity of CuCl, by the doping with Zn is reported herein. The doped CuCl films display strong room temperature cathodoluminescence (CL) at ~ 385nm, which is similar to that of the undoped films. Hall Effect measurements show an n-type conductivity of the doped films.
This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders:
This project was funded by the Enterprise Ireland Commercialisation Fund for Technology Development (Project# CFTD/07/IT/331). This work was part-funded by the Irish Higher Education Authority PRTLI "INSPIRE" project. The authors would like to thank Mr.
ID Code:
17856
Deposited On:
04 Mar 2013 15:07 by
Rajani K.V.
. Last Modified 12 Jan 2023 16:01