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Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs

Islam, M.S. and McNally, Patrick J. (2001) Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs. IEEE Transactions on Electronic Devices, 48 (4). pp. 823-825. ISSN 0018-9383

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Abstract

GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are fabricated for comparison. The thermal stability of the Pd/Sn, Pd/Ge and Pd/Sn/Au ohmic contacts is also presented

Item Type:	Article (Published)
Refereed:	Yes
Uncontrolled Keywords:	MESFETs; metallization; nonalloyed contacts; ohmic contacts; Pd-based contacts;
Subjects:	Engineering > Electronics
DCU Faculties and Centres:	DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:	Institute of Electrical and Electronics Engineers
Official URL:	http://dx.doi.org/10.1109/16.915736
Copyright Information:	Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
ID Code:	190
Deposited On:	06 Feb 2008 by DORAS Administrator. Last Modified 02 Feb 2009 14:07

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