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Highly conductive Sb-doped layers in strained Si

Bennett, N.S. and Cowern, N.E.B. and Smith, A.J. and Gwilliam, R.M. and Sealy, B.J. and O'Reilly, Lisa and McNally, Patrick J. and Cooke, G. and Kheyrandish, H. (2006) Highly conductive Sb-doped layers in strained Si. Applied Physics Letters, 89 (18). ISSN 0003-6951

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Abstract

The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices

Item Type:Article (Published)
Refereed:Yes
Subjects:Engineering > Electronics
Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.2382741
Copyright Information:©2006 American Institute of Physics
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:195
Deposited On:06 Feb 2008 by DORAS Administrator. Last Modified 02 Feb 2009 14:31

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