The Hg isoelectronic defect in ZnO
Cullen, Joseph and Johnston, K. and Dunker, D. and McGlynn, Enda and Yakovlev, D.R. and Bayer, M. and Henry, Martin O. (2013) The Hg isoelectronic defect in ZnO. Journal of Applied Physics, 114 (19). p. 193515. ISSN 0021-8979
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We report a study of the luminescence due to Hg in ZnO, concentrating on the main zero phonon line (ZPL) at 3.2766(1) eV and its associated phonon sidebands. For a sample implanted with radioactive 192Hg, the ZPL intensity, normalised to that of shallow bound exciton emission, is observed to decrease with an equivalent half-life of 4.5(1) h, very close to the 4.85(20) h half-life of 192Hg. ZnO
implanted with stable Hg impurities produces the same luminescence spectrum. Temperature dependent measurements confirm that the zero phonon line is a thermalizing doublet involving one allowed and one largely forbidden transition from excited states separated by 0.91(1)meV to a common ground state. Uniaxial stress measurements show that the allowed transition takes place from an orbitally degenerate excited state to a non-degenerate ground state in a centre of trigonal (C3v) symmetry while the magneto-optical properties are characteristic of electron-hole pair recombination at an isoelectronic defect. The doublet luminescence is assigned to bound exciton recombination involving exchange-split gamma5 and gamma1,2 excited states (using C6v symmetry labels; gamma3 and gamma1,2 using C3v labels) at isoelectronic Hg impurities substituting for Zn in the crystal. The electron and hole g values deduced from the magneto-optical data indicate that this Hg impurity
centre in ZnO is hole-attractive.
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