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Room-temperature ultraviolet luminescence from ƴ-CuCl grown on near lattice-matched silicon

O'Reilly, Lisa and Lucas, Francis Olabanji and McNally, Patrick J. and Reader, Alec and Natarajan, Gomathi and Daniels, Stephen and Cameron, David C. and Mitra, Anirban and Martinez-Rosas, M. and Bradley, Ann Louise (2005) Room-temperature ultraviolet luminescence from ƴ-CuCl grown on near lattice-matched silicon. Journal of Applied Physics, 98 (11). ISSN 0021-8979

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Abstract

We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, ƴ-CuCl on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si (100) or Si (111), reveal a strong room-temperature Z3 excitonic emission at ~387 nm. We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of ƴ-CuCl on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the ƴ-CuCl. Since the excitonic binding energy in this direct band-gap material is of the order of 190 meV at room temperature, the electron-hole recombination and subsequent light emission at ~380 and ~387 nm are mediated by excitonic effects.

Item Type:Article (Published)
Refereed:Yes
Subjects:Physical Sciences > Thin films
Physical Sciences > Optoelectronics
Engineering > Electronics
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Research Initiatives and Centres > National Centre for Plasma Science and Technology (NCPST)
DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.2138799
Copyright Information:©2005 American Institute of Physics
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:197
Deposited On:06 Feb 2008 by DORAS Administrator. Last Modified 02 Feb 2009 14:36

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