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Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers

Rantamäki, R. and Tuomi, T. and Zytkiewicz, Z.R. and Domagala, J. and McNally, Patrick J. (1999) Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics, 86 (8). ISSN 0021-8979

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Abstract

Synchrotron x-ray back reflection section topographs of epitaxial lateral overgrown (ELO) GaAs samples grown on (001) GaAs substrates show images of the GaAs layers bent due to the interaction between the layer and the SiO2 mask. The topographs are simulated under the assumption of orientational contrast. Using the same data the measured x-ray diffraction curve is simulated. The calculations, which are in good agreement with the measurements, are used to gain information on the tilted (001) lattice planes in each ELO layer. We show that the bending of ELO lattice planes reaches a maximum at the center of the ELO stripes, where misorientation is at a minimum, and decreases towards the edges of the stripes, where misorientation reaches a maximum.

Item Type:Article (Published)
Refereed:Yes
Subjects:Engineering > Electronics
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.371360
Copyright Information:©1999 American Institute of Physics.
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:201
Deposited On:06 Feb 2008 by DORAS Administrator. Last Modified 02 Feb 2009 14:43

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