Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal
Byrne, Conor and Brady, A. and Walsh, Lee and McCoy, Anthony and Bogan, Justin and McGlynn, Enda and Vijayaraghavan, Rajani K. and Hughes, Greg (2016) Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal. Thin Solid Films, 599 . pp. 59-63. ISSN 0040-6090
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A copper-aluminium (CuAl) alloy (90% : 10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/ SiO2/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO2 interface. Electrical four point probe measurements indicates that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk.
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