The use of semiconductor optical amplifiers (SOA) in optical communications networks has so far been limited
due to their inherent large noise figure (NF) compared to Erbium Doped Fibre Amplifiers. Therefore
improvement of the noise performance of SOAs is critical to their widespread adoption in future networks. We
propose to reduce the NF of the SOA by introducing a lasing cavity lateral to the axis of amplification of the
device. The carrier density within the cavity is clamped at the lasing threshold. It is thus possible to engineer the
carrier density distribution along the active waveguide by controlling the cavity design. According to our
simulations, some of the cavity designs lead to a reduction of the noise figure in this novel SOA.
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Funders:
Enterprise Ireland under the technological development Program,CFDT/06/IT/332, INSPIRE Programme, funded by the Irish Government's Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013
ID Code:
24916
Deposited On:
05 Aug 2020 11:01 by
Pascal Landais
. Last Modified 08 Nov 2022 14:32