Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications
O'Reilly, Lisa, Mitra, Anirban, Lucas, Francis Olabanji, Natarajan, Gomathi, McNally, Patrick J.ORCID: 0000-0003-2798-5121, Daniels, StephenORCID: 0000-0002-5987-9924, Lankinen, Aapo, Lowney, Donnacha, Bradley, Ann Louise ORCID: 0000-0002-9399-8628 and Cameron, David C.
(2007)
Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications.
Journal of Materials Science: Materials in Electronics, 18
(1).
pp. 57-60.
ISSN 1573-482X
The use of co-evaporation of ZnCl2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of ±4V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n ~ 1 x 1016 cm-3 and Hall mobility ~ 29 cm2v-1s-1 for a CuCl sample doped with a nominal 3 mole % ZnCl2. By use of an in situ CaF2 capping layer, transmission > 90% is achieved. At room temperature a strong Z3 free excitonic emission occurs at ~385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.
Metadata
Item Type:
Article (Published)
Refereed:
Yes
Additional Information:
The original publication is available at www.springerlink.com