Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications
O'Reilly, Lisa and Mitra, Anirban and Lucas, Francis Olabanji and Natarajan, Gomathi and McNally, Patrick J. and Daniels, Stephen and Lankinen, Aapo and Lowney, Donnacha and Bradley, Ann Louise and Cameron, David C. (2007) Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications. Journal of Materials Science: Materials in Electronics, 18 (1). pp. 57-60. ISSN 1573-482X
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The use of co-evaporation of ZnCl2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of ±4V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n ~ 1 x 1016 cm-3 and Hall mobility ~ 29 cm2v-1s-1 for a CuCl sample doped with a nominal 3 mole % ZnCl2. By use of an in situ CaF2 capping layer, transmission > 90% is achieved. At room temperature a strong Z3 free excitonic emission occurs at ~385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.
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