Number of items: 6.
Wong, Chiu Soon and Bennett, N.S. and Manessis, D. and Danilewsky, Andreas N. and McNally, Patrick J. (2014) Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages. Microelectronic Engineering, 117 . pp. 48-56. ISSN 0167-9317
Allen, David and Stopford, Jennifer and Wittge, Jochen and Danilewsky, Andreas N. and McNally, Patrick J. (2011) Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon. Journal Of Applied Crystallography, 44 (3). pp. 526-531. ISSN 0021-8898
Allen, David and Wittge, Jochen and Zlotos, A. and Gorogostegui-Coinas, E. and Garagorri, J. and McNally, Patrick J. and Danilewsky, Andreas N. and Elizalde, M.R. (2010) Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-raman spectroscopy and white beam x-ray topography. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, 268 (3-4). pp. 383-387. ISSN 0168-583x
McNally, Patrick J. and Kanatharana, Jarujit and Toh, B.H.W. and McNeill, D.W. and Danilewsky, Andreas N. and Tuomi, T. and Knuuttila, L. and Riikonen, J. and Toivonen, J. and Simon, R. (2004) Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. Journal of Applied Physics, 96 (12). ISSN 0021-8979
McNally, Patrick J. and Rantamäki, R. and Tuomi, T. and Danilewsky, Andreas N. and Lowney, Donnacha and Curley, John W. and Herbert, P.A.F. (2001) Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography. IEEE Transactions on Components and Packaging Technologies, 24 (1). pp. 76-83. ISSN 1521-3331
McNally, Patrick J. and Dilliway, G. and Bonar, J.M. and Willoughby, A. and Tuomi, T. and Rantamäki, R. and Danilewsky, Andreas N. and Lowney, Donnacha (2000) On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure. Applied Physics Letters, 77 (11). ISSN 0003-6951