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Author: McDonnell, Stephen

Number of items: 6.

2009

McDonnell, Stephen (2009) Spectroscopic characterisation of high dielectric constant materials on semiconducting surfaces. PhD thesis, Dublin City University.

McDonnell, Stephen and Brennan, Barry and Hughes, Greg (2009) High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition. Applied Physics Letters, 95 (7). 0729031-0729033. ISSN 0003-6951

2008

Cherkaoui, K. and Monaghan, S. and Negara, M.A. and Modreanu, M. and Hurley, P.K. and O’Connell, Deborah and McDonnell, Stephen and Hughes, Greg and Wright, S. and Barklie, R.C. and Bailey, P. and Noakes, T.C.Q. (2008) Electrical, structural, and chemical properties of HfO₂ films formed by electron beam evaporation. Journal of Applied Physics, 104 (6). 064113-1. ISSN 0021-8979

Hinkle, C. L. and Sonnet, A. M. and Vogel, E. M. and McDonnell, Stephen and Hughes, Greg and Milojevic, M. and Lee, B. and Aguirre-Tostado, F. S. and Choi, K. J. and Kim, H. C. and Kim, J. and Wallace, R. M. (2008) GaAs interfacial self-cleaning by atomic layer deposition. Applied Physics Letters, 92 (7). 071901-1. ISSN 0003-6951

Aguirre-Tostado, F. S. and Milojevic, M. and Hinkle, C. L. and Vogel, E. M. and Wallace, R. M. and McDonnell, Stephen and Hughes, Greg (2008) Indium stability on InGaAs during atomic H surface cleaning. Applied Physics Letters, 92 (17). 171906-1-171906-3. ISSN 0003-6951

2007

Hinkle, C. L. and Sonnet, A. M. and Vogel, E. M. and McDonnell, Stephen and Hughes, Greg and Milojevic, M. and Lee, B. and Aguirre-Tostado, F. S. and Choi, K. J. and Kim, J. and Wallace, R. M. (2007) Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation. Applied Physics Letters, 91 (16). 163512-1-163512-3. ISSN 0003-6951

This list was generated on Tue Dec 12 05:59:12 2017 GMT.