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Author: McNally, Patrick J.

Number of items: 30.

2014

Wong, Chiu Soon and Bennett, N.S. and Manessis, D. and Danilewsky, A.N. and McNally, Patrick J. (2014) Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages. Microelectronic Engineering, 117 . pp. 48-56. ISSN 0167-9317

2013

Vijayaraghavan, Rajani K. and Daniels, Stephen and Rahman, M. and Cowley, A. and McNally, Patrick J. (2013) Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell. Materials Letters, 111 . pp. 63-66. ISSN 0167-577X

Moore, David and Rahman, Mahfujur and Dowling, Denis P. and McNally, Patrick J. and Brabazon, Dermot (2013) Laser machined macro and micro structures on glass for enhanced light trapping in solar cells. Applied Physics A: Materials Science & Processing, 110 (3). pp. 661-665. ISSN 1432-0630

Byrne, Daragh and Cowley, Aidan and McNally, Patrick J. and McGlynn, Enda (2013) Dellafossite CuAlO2 film growth and conversion to Cu–Al2O3 metal ceramic composite via control of annealing atmospheres. CrystEngComm, 15 . pp. 6144-6150. ISSN 1466-8033

2012

Wong, Chiu Soon and Bennett, N.S. and Galiana, B. and Tejedor, P. and Benedicto, M. and Molina-Aldareguia, J.M. and McNally, Patrick J. (2012) Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques. Semiconductor Science and Technology, 27 (11). p. 115012. ISSN 0268-1242

Foy, Barry and McGlynn, Enda and Cowley, Aidan and McNally, Patrick J. and Henry, Martin O. (2012) Study of exciton-polariton modes in nanocrystalline thin films of CuCl using reflectance spectroscopy. Journal of Applied Physics, 112 . 033505-033505. ISSN 1089-7550

Vijayaraghavan, Rajani K. and Daniels, Stephen and McGlynn, Enda and Gandhiraman, Ram Prasad and Groarke, Robert and McNally, Patrick J. (2012) Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper. Materials Letters, 71 . pp. 160-163. ISSN 0167-577X

2011

Moore, David and Krishnamurthy, Satheesh and Chao, Y. and Wang, Q. and Brabazon, Dermot and McNally, Patrick J. (2011) Characteristics of silicon nanocrystals for photovoltaic applications. physica status solidi a, 208 (3). pp. 604-607. ISSN 0031-8965

Allen, David and Stopford, Jennifer and Wittge, Jochen and Danilewsky, Andreas and McNally, Patrick J. (2011) Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon. Journal Of Applied Crystallography, 44 (3). pp. 526-531. ISSN 0021-8898

2010

Wong, Chiu Soon and Bennett, N.S. and McNally, Patrick J. and Galiana, B. and Tejedor, P. and Benedicto, M. and Molina-Aldareguia, J.M. and Monaghan, S. and Hurley, P.K. and Cherkaoui, K. (2010) Multi-technique characterisation of MOVPE-grown GaAs on Si. Microelectronic Engineering, 88 (4). pp. 472-475. ISSN 0167-9317

Allen, David and Wittge, Jochen and Zlotos, A. and Gorogostegui-Coinas, E. and Garagorri, J. and McNally, Patrick J. and Danilewsky, A.N. and Elizalde, M.R. (2010) Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-raman spectroscopy and white beam x-ray topography. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, 268 (3-4). pp. 383-387. ISSN 0168-583x

Vijayaraghavan, Rajani K. and Olabanji Lucas, Francis and Alam, Mohammad and Daniels, Stephen and McNally, Patrick J. (2010) Zn doped nanocrystalline CuCl thin films for optoelctronic applications. MRS Proceedings, 1260 . ISSN 1946-4274

2008

Horan, Ken and Lankinen, Aapo and O'Reilly, Lisa and Bennett, N.S. and McNally, Patrick J. and Sealy, B.J. and Cowern, N.E.B. and Tuomi, T. (2008) Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B, 154-155 . pp. 118-121. ISSN 0921-5107

O'Reilly, Lisa and Horan, Ken and McNally, Patrick J. and Bennett, N.S. and Cowern, N.E.B. and Lankinen, Aapo and Sealy, B.J. and Gwilliam, R.M. and Noakes, T.C.Q. and Bailey, P. (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials. Applied Physics Letters, 92 (23). ISSN 1077-3118

2007

O'Reilly, Lisa and Mitra, Anirban and Lucas, Francis Olabanji and Natarajan, Gomathi and McNally, Patrick J. and Daniels, Stephen and Lankinen, Aapo and Lowney, Donnacha and Bradley, Ann Louise and Cameron, David C. (2007) Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications. Journal of Materials Science: Materials in Electronics, 18 (1). pp. 57-60. ISSN 1573-482X

Chen, Weimin and McCloskey, Paul and Rohan, James F. and Byrne, Patrick and McNally, Patrick J. (2007) Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization. IEEE Transactions on Components and Packaging Technologies, 30 (1). pp. 144-151. ISSN 1521-3331

2006

Natarajan, Gomathi and Rajendra Kumar, Ramasamy Thangavelu and Daniels, Stephen and Cameron, David C. and McNally, Patrick J. (2006) Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties. Journal of Applied Physics, 100 (9). ISSN 0021-8979

Bennett, N.S. and Cowern, N.E.B. and Smith, A.J. and Gwilliam, R.M. and Sealy, B.J. and O'Reilly, Lisa and McNally, Patrick J. and Cooke, G. and Kheyrandish, H. (2006) Highly conductive Sb-doped layers in strained Si. Applied Physics Letters, 89 (18). ISSN 0003-6951

Natarajan, Gomathi and Daniels, Stephen and Cameron, David C. and O'Reilly, Lisa and Mitra, Anirban and McNally, Patrick J. and Lucas, Francis Olabanji and Rajendra Kumar, Ramasamy Thangavelu and Reid, Ian and Bradley, Ann Louise (2006) Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications. Journal of Applied Physics, 100 (3). ISSN 0021-8979

2005

O'Reilly, Lisa and Lucas, Francis Olabanji and McNally, Patrick J. and Reader, Alec and Natarajan, Gomathi and Daniels, Stephen and Cameron, David C. and Mitra, Anirban and Martinez-Rosas, M. and Bradley, Ann Louise (2005) Room-temperature ultraviolet luminescence from ƴ-CuCl grown on near lattice-matched silicon. Journal of Applied Physics, 98 (11). ISSN 0021-8979

2004

McNally, Patrick J. and Kanatharana, Jarujit and Toh, B.H.W. and McNeill, D.W. and Danilewsky, A.N. and Tuomi, T. and Knuuttila, L. and Riikonen, J. and Toivonen, J. and Simon, R. (2004) Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. Journal of Applied Physics, 96 (12). ISSN 0021-8979

Murphy, G. and Whelan, Paul F. and McNally, Patrick J. and Tuomi, T. (2004) The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendell¨osung fringe analysis in X-ray topography. European Physical Journal - Applied Physics (The), 27 (1-3). pp. 443-446. ISSN 1286-0042

2002

Dewan, M.N.A. and McNally, Patrick J. and Herbert, P.A.F. (2002) Plasma modeling for a nonsymmetric capacitive discharge driven by a nonsinusoidal radio frequency current. Journal of Applied Physics, 91 (9). ISSN 0021-8979

2001

Islam, Md. Shafiqul and McNally, Patrick J. (2001) Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs. IEEE Transactions on Electronic Devices, 48 (4). pp. 823-825. ISSN 0018-9383

McNally, Patrick J. and Rantamäki, R. and Tuomi, T. and Danilewsky, A.N. and Lowney, Donnacha and Curley, John W. and Herbert, P.A.F. (2001) Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography. IEEE Transactions on Components and Packaging Technologies, 24 (1). pp. 76-83. ISSN 1521-3331

2000

McNally, Patrick J. and Dilliway, G. and Bonar, J.M. and Willoughby, A. and Tuomi, T. and Rantamäki, R. and Danilewsky, A.N. and Lowney, Donnacha (2000) On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure. Applied Physics Letters, 77 (11). ISSN 0003-6951

1999

Rantamäki, R. and Tuomi, T. and Zytkiewicz, Z.R. and Domagala, J. and McNally, Patrick J. (1999) Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics, 86 (8). ISSN 0021-8979

1998

Baric, Adrijan and McNally, Patrick J. (1998) A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior. IEEE Transactions on Education, 41 (3). pp. 219-223. ISSN 0018-9359

1996

McNally, Patrick J. and Tuomi, T. and Herbert, P.A.F. and Baric, Adrijan and Äyräs, P. and Karilahti, M. and Lipsanen, H. and Tromby, M. (1996) Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's. IEEE Transactions on Electron Devices, 43 (7). pp. 1085-1091. ISSN 1085-1091

McNally, Patrick J. and Herbert, P.A.F. and Tuomi, T. and Karilahti, M. and Higgins, J.A. (1996) Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes. Journal of Applied Physics, 79 (11). ISSN 0021-8979

This list was generated on Fri May 26 06:04:12 2017 IST.