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Author: Tuomi, T.

Number of items: 8.

2008

Horan, Ken and Lankinen, Aapo and O'Reilly, Lisa and Bennett, N.S. and McNally, Patrick J. and Sealy, B.J. and Cowern, N.E.B. and Tuomi, T. (2008) Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B, 154-155 . pp. 118-121. ISSN 0921-5107

2004

McNally, Patrick J. and Kanatharana, Jarujit and Toh, B.H.W. and McNeill, D.W. and Danilewsky, Andreas N. and Tuomi, T. and Knuuttila, L. and Riikonen, J. and Toivonen, J. and Simon, R. (2004) Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. Journal of Applied Physics, 96 (12). ISSN 0021-8979

Murphy, G. and Whelan, Paul F. and McNally, Patrick J. and Tuomi, T. (2004) The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendell¨osung fringe analysis in X-ray topography. European Physical Journal - Applied Physics (The), 27 (1-3). pp. 443-446. ISSN 1286-0042

2001

McNally, Patrick J. and Rantamäki, R. and Tuomi, T. and Danilewsky, Andreas N. and Lowney, Donnacha and Curley, John W. and Herbert, P.A.F. (2001) Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography. IEEE Transactions on Components and Packaging Technologies, 24 (1). pp. 76-83. ISSN 1521-3331

2000

McNally, Patrick J. and Dilliway, G. and Bonar, J.M. and Willoughby, A. and Tuomi, T. and Rantamäki, R. and Danilewsky, Andreas N. and Lowney, Donnacha (2000) On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure. Applied Physics Letters, 77 (11). ISSN 0003-6951

1999

Rantamäki, R. and Tuomi, T. and Zytkiewicz, Z.R. and Domagala, J. and McNally, Patrick J. (1999) Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics, 86 (8). ISSN 0021-8979

1996

McNally, Patrick J. and Tuomi, T. and Herbert, P.A.F. and Baric, Adrijan and Äyräs, P. and Karilahti, M. and Lipsanen, H. and Tromby, M. (1996) Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's. IEEE Transactions on Electron Devices, 43 (7). pp. 1085-1091. ISSN 1085-1091

McNally, Patrick J. and Herbert, P.A.F. and Tuomi, T. and Karilahti, M. and Higgins, J.A. (1996) Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes. Journal of Applied Physics, 79 (11). ISSN 0021-8979

This list was generated on Tue Nov 21 08:12:14 2017 GMT.