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Wave-mixing analysis for THz-signals generation in dc-biased semiconductor optical devices at room temperature

Maldonado-Basilio, Ramón, Latkowski, Sylwester orcid logoORCID: 0000-0003-4464-4097, Surre, Frederic and Landais, Pascal orcid logoORCID: 0000-0002-4807-0695 (2010) Wave-mixing analysis for THz-signals generation in dc-biased semiconductor optical devices at room temperature. In: WTM 2010 - IEEE Photonics Society Winter Topical Meeting, 11-13 January 2010, Majorca, Spain. ISBN 978-1-4244-5240-8

Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A comparison of the optical time-fluctuations measured at their output stresses the importance of a resonant cavity in THz-signals generation from semiconductor optical devices.
Item Type:Conference or Workshop Item (Paper)
Event Type:Conference
Uncontrolled Keywords:III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser cavity resonators; microwave photonics; multiwave mixing; quantum cascade lasers; semiconductor optical amplifiers; terahertz wave generation;
Subjects:Physical Sciences > Semiconductors
DCU Faculties and Centres:Research Institutes and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Published in: 2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM). . Institute of Electrical and Electronics Engineers. ISBN 978-1-4244-5240-8
Publisher:Institute of Electrical and Electronics Engineers
Official URL:http://dx.doi.org/10.1109/PHOTWTM.2010.5421993
Copyright Information:©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
ID Code:15445
Deposited On:08 Jul 2010 15:20 by DORAS Administrator . Last Modified 13 Jul 2020 15:59

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