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Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

Allen, David, Stopford, Jennifer, Wittge, Jochen, Danilewsky, Andreas N. and McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121 (2011) Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon. Journal Of Applied Crystallography, 44 (3). pp. 526-531. ISSN 0021-8898

In the semiconductor industry, wafer handling introduces micro-cracks at the wafer edge and the causal relationship of these cracks to wafer breakage is a difficult task. By way of understanding the wafer breakage process, a series of nano-indents were introduced both into 20 20 mm (100) wafer pieces and into whole wafers as a means of introducing controlled strain. Visualization of the three-dimensional structure of crystal defects has been demonstrated. The silicon samples were then treated by various thermal anneal processes to initiate the formation of dislocation loops around the indents. This article reports the three-dimensional X-ray diffraction imaging and visualization of the structure of these dislocations. A series of X-ray section topographs of both the indents and the dislocation loops were taken at the ANKA Synchrotron, Karlsruhe, Germany. The topographs were recorded on a CCD system combined with a high-resolution scintillator crystal and were measured by repeated cycles of exposure and sample translation along a direction perpendicular to the beam. The resulting images were then rendered into three dimensions utilizing opensource three-dimensional medical tomography algorithms that show the dislocation loops formed. Furthermore this technique allows for the production of a video (avi) file showing the rotation of the rendered topographs around any defined axis. The software also has the capability of splitting the image along a segmentation line and viewing the internal structure of the strain fields.
Item Type:Article (Published)
Uncontrolled Keywords:Crystallography
Subjects:Engineering > Materials
Engineering > Electronic engineering
DCU Faculties and Centres:Research Institutes and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:International Union of Crystallography
Official URL:http://dx.doi.org/10.1107/S0021889811013264
Copyright Information:© 2011 IUCr.
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders:European Framework Programme 7, Irish Higher education Authority PRTLI Inspire
ID Code:16353
Deposited On:25 May 2011 09:56 by David Allen . Last Modified 16 Jan 2019 13:40

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