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Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-raman spectroscopy and white beam x-ray topography

Allen, David and Wittge, J. and Zlotos, A. and Gorogostegui-Coinas, E. and Garagorri, J. and McNally, Patrick J. and Danilewsky, A. and Elizalde, M.R. (2010) Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-raman spectroscopy and white beam x-ray topography. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, 268 (3-4). pp. 383-387. ISSN 0168-583x

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Abstract

In the semiconductor manufacturing industry, wafer handling introduces micro-cracks at the wafer edge. During heat treatment these can produce larger, long-range cracks in the wafer which can cause wafer breakage during manufacture. Two complimentary techniques, micro-Raman spectroscopy (μRS) and White Beam Synchrotron X-ray Topography (WBSXRT) were employed to study both the micro-cracks and the associated strain fields produced by nano-indentations in Si wafers, which were used as a means of introducing controlled strain in the wafers. It is shown that both the spatial lateral and depth distribution of these long range strain fields are relatively isotropic in nature. The Raman spectra suggest the presence of a region under tensile strain beneath the indents, which can indicate a crack beneath the indent and the data strongly suggests that there exists a minimum critical applied load below which cracking will not initiate.

Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:micro-raman spectroscopy; silicon; x-ray topography
Subjects:Physical Sciences > Semiconductors
DCU Faculties and Centres:Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:Elsevier
Official URL:http://dx.doi.org/10.1016/j.nimb.2009.10.174
Copyright Information:© 2009 Elsevier B.V.
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders:EU-FP7, PRTLI "Inspire"
ID Code:15234
Deposited On:19 Feb 2010 14:35 by David Allen. Last Modified 19 Feb 2010 14:35

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