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A scalable model of the substrate network in deep N-Well RF MOSFETs with multiple fingers

Condon, Marissa (2011) A scalable model of the substrate network in deep N-Well RF MOSFETs with multiple fingers. Circuits and Systems, 2 (2). pp. 91-100. ISSN 2153-1293

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Abstract

A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the characteristics of the substrate to extract the different substrate components. A methodology is developed to directly extract the parameters for the substrate network from the measured data. By using the measured two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the substrate model are further verified and validated by matching the measured and simulated output admittances. Excellent agreement up to 40 GHz for configurations in common-source has been achieved.

Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:Deep N-Well (DNW); RF Mosfets; Substrate Network; Scalable Model
Subjects:Engineering > Electronic engineering
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Publisher:Scientific Research Publishing
Official URL:http://www.scirp.org/journal/cs/
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
ID Code:16359
Deposited On:23 May 2011 11:56 by Fran Callaghan. Last Modified 23 May 2011 11:56

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