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Thin film diffusion barrier formation in PDMS microcavities

Riaz, Asif, Gandhiraman, Ram Prasad, Dimov, Ivan Krastev, Basabe-Desmonts, Lourdes, Ricco, Antonio J. orcid logoORCID: 0000-0002-2355-4984, Ducrée, Jens orcid logoORCID: 0000-0002-0366-1897, Daniels, Stephen and Lee, Luke P. (2009) Thin film diffusion barrier formation in PDMS microcavities. In: TRANSDUCERS 2009 - International Solid-State Sensors, Actuators and Microsystems Conference, 21-25 June 2009, Denver, USA. ISBN 978-1-4244-4193-8

Abstract
We describe a method to form glass like thin film barrier in polydimethylsiloxane (PDMS) microcavities. The reactive fragments for the surface reaction were created from O2 and hexamethyldisiloxane (HMDS) in RF plasma environment. The reaction is based on migration of the reactive fragments into the microcavities by diffusion, to form a glass like thin film barrier to conceal the naked surface of PDMS. The barrier successfully blocked penetration of a fluorescent dye rhodamine B (RhB) into PDMS. The thickness of the barrier could be controlled by the time of reaction and the pressure inside the reaction chamber. There is a wide range of applications of such a technique in various fields, e.g. for coating the covered surfaces of microfluidic channels, tubes, capillaries, medical devices, catheters, as well as chip-integrated capillary electrophoresis and advanced electronic and opto-fluidic packaging.
Metadata
Item Type:Conference or Workshop Item (Paper)
Event Type:Conference
Refereed:Yes
Uncontrolled Keywords:polydimethylsiloxane; diffusion barrier; hexamethyldisiloxane; plasma enhanced vapor deposition;
Subjects:Biological Sciences > Microfluidics
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Research Institutes and Centres > National Centre for Sensor Research (NCSR)
Research Institutes and Centres > Biomedical Diagnostics Institute (BDI)
Published in: TRANSDUCERS 2009 - International Solid-State Sensors, Actuators and Microsystems Conference. . Institute of Electrical and Electronics Engineers. ISBN 978-1-4244-4193-8
Publisher:Institute of Electrical and Electronics Engineers
Official URL:http://dx.doi.org/10.1109/SENSOR.2009.5285939
Copyright Information:©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders:Science Foundation Ireland. Grant No. 05/CE3/B754.
ID Code:15458
Deposited On:14 Jul 2010 13:47 by DORAS Administrator . Last Modified 19 Sep 2018 09:27
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