A scalable model of the substrate network in deep N-Well
RF MOSFETs with multiple fingers
Condon, Marissa
(2011)
A scalable model of the substrate network in deep N-Well
RF MOSFETs with multiple fingers.
Circuits and Systems, 2
(2).
pp. 91-100.
ISSN 2153-1293
A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number
of fingers is presented for the first time. The test structure developed in [1] is employed to directly access
the characteristics of the substrate to extract the different substrate components. A methodology is developed
to directly extract the parameters for the substrate network from the measured data. By using the measured
two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float
configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the
substrate model are further verified and validated by matching the measured and simulated output admittances.
Excellent agreement up to 40 GHz for configurations in common-source has been achieved.
Item Type:
Article (Published)
Refereed:
Yes
Uncontrolled Keywords:
Deep N-Well (DNW); RF Mosfets; Substrate Network; Scalable Model