Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper
Vijayaraghavan, Rajani K.ORCID: 0000-0003-1096-448X
(2012)
Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper.
Materials Letters, 71
.
pp. 160-163.
ISSN 0167-577X
We report on the direct formation of phase pure nanocrystalline cuprous oxide (Cu2O) film with band gap ~ 2 eV by microwave plasma oxidation of pulsed dc magnetron sputtered Cu films and the highly controlled oxidation of Cu in to Cu2O and CuO phases by controlling the plasma exposure time. The structural, morphological and optoelectronic properties of the films were investigated. p-type Cu2O film with a grain size ~20-30 nm, resistivity of ~66 Ω cm and a hole concentration of ~2×1017 cm-3 is obtained for a plasma exposure time of 10 min without using any foreign dopants. The optical absorption coefficient (~105 cm-1) of the Cu2O film is also reported.
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Funders:
This project was funded by the SFI Research Frontiers Programme, the Enterprise Ireland Commercialization Fund for Technology Development and partially supported by the Irish Higher Education Authority PRTLI "INSPIRE" project and the SFI "Precision" Stra
ID Code:
17854
Deposited On:
04 Mar 2013 11:52 by
Rajani K.V.
. Last Modified 09 Jun 2020 16:11