Tanner, Brian K. ORCID: 0000-0002-1474-177X, McNally, Patrick J. ORCID: 0000-0003-2798-5121 and Danilewsky, Andreas N. (2021) X-ray imaging of silicon die within fully packaged semiconductor devices. Powder Diffraction, 36 (2). pp. 78-84. ISSN 0885-7156
Abstract
X-ray diffraction imaging (XRDI) (topography) measurements of silicon die warpage within fully
packaged commercial quad-flat no-lead devices are described. Using synchrotron radiation, it has
been shown that the tilt of the lattice planes in the Analog Devices AD9253 die initially falls, but
after 100 °C, it rises again. The twist across the die wafer falls linearly with an increase in temperature.
At 200 °C, the tilt varies approximately linearly with position, that is, displacement varies quadratically along the die. The warpage is approximately reversible on cooling, suggesting that it has a simple
paraboloidal form prior to encapsulation; the complex tilt and twisting result from the polymer setting
process. Feasibility studies are reported, which demonstrate that a divergent beam and quasimonochromatic radiation from a sealed X-ray tube can be used to perform warpage measurements
by XRDI in the laboratory. Existing tools have limitations because of the geometry of the X-ray
optics, resulting in applicability only to simple warpage structures. The necessary modifications
required for use in situations of complex warpage, for example, in multiple die interconnected packages are specified. © The Author(s), 2021. Published by Cambridge University Press on behalf of
International Centre for Diffraction Data. This is an Open Access article, distributed under the
terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/),
which permits unrestricted re-use, distribution, and reproduction in any medium, provided the
original work is properly cited. [doi:10.1017/S088571562100021X]
Metadata
Item Type: | Article (Published) |
---|---|
Refereed: | Yes |
Uncontrolled Keywords: | X-ray diffraction imaging; semiconductor packaging; device warpage; synchrotron; radiation; silicon. |
Subjects: | UNSPECIFIED |
DCU Faculties and Centres: | DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering Research Institutes and Centres > I-Form |
Publisher: | Cambridge University Press |
Official URL: | https://dx.doi.org/10.1017/S088571562100021X |
Copyright Information: | © The Authors 2021. Open Access (CC-BY-4.0) |
Funders: | CALIPSOplus under Grant Agreement No. 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020, Science Foundation Ireland (SFI) through the I-Form Advanced Manufacturing Research Centre (Grant No. 16/RC/3872) |
ID Code: | 26048 |
Deposited On: | 01 Jul 2021 13:10 by Vidatum Academic . Last Modified 12 Apr 2022 12:59 |
Documents
Full text available as:
Preview |
PDF
- Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
670kB |
Downloads
Downloads
Downloads per month over past year
Archive Staff Only: edit this record