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X-ray imaging of silicon die within fully packaged semiconductor devices

Tanner, Brian K. orcid logoORCID: 0000-0002-1474-177X, McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121 and Danilewsky, Andreas N. (2021) X-ray imaging of silicon die within fully packaged semiconductor devices. Powder Diffraction, 36 (2). pp. 78-84. ISSN 0885-7156

Abstract
X-ray diffraction imaging (XRDI) (topography) measurements of silicon die warpage within fully packaged commercial quad-flat no-lead devices are described. Using synchrotron radiation, it has been shown that the tilt of the lattice planes in the Analog Devices AD9253 die initially falls, but after 100 °C, it rises again. The twist across the die wafer falls linearly with an increase in temperature. At 200 °C, the tilt varies approximately linearly with position, that is, displacement varies quadratically along the die. The warpage is approximately reversible on cooling, suggesting that it has a simple paraboloidal form prior to encapsulation; the complex tilt and twisting result from the polymer setting process. Feasibility studies are reported, which demonstrate that a divergent beam and quasimonochromatic radiation from a sealed X-ray tube can be used to perform warpage measurements by XRDI in the laboratory. Existing tools have limitations because of the geometry of the X-ray optics, resulting in applicability only to simple warpage structures. The necessary modifications required for use in situations of complex warpage, for example, in multiple die interconnected packages are specified. © The Author(s), 2021. Published by Cambridge University Press on behalf of International Centre for Diffraction Data. This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited. [doi:10.1017/S088571562100021X]
Metadata
Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:X-ray diffraction imaging; semiconductor packaging; device warpage; synchrotron; radiation; silicon.
Subjects:UNSPECIFIED
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Institutes and Centres > I-Form
Publisher:Cambridge University Press
Official URL:https://dx.doi.org/10.1017/S088571562100021X
Copyright Information:© The Authors 2021. Open Access (CC-BY-4.0)
Funders:CALIPSOplus under Grant Agreement No. 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020, Science Foundation Ireland (SFI) through the I-Form Advanced Manufacturing Research Centre (Grant No. 16/RC/3872)
ID Code:26048
Deposited On:01 Jul 2021 13:10 by Vidatum Academic . Last Modified 12 Apr 2022 12:59
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