2014

Byrne, Daragh ORCID: 0000-0002-2040-9765, Cowley, Aidan, Bennett, N.S. and McGlynn, Enda ORCID: 0000-0002-3412-9035 (2014) The luminescent properties of CuAlO2. Journal of Materials Chemistry C, 2 . pp. 7859-7868. ISSN 2050-7526

Wong, Chiu Soon, Bennett, N.S., Manessis, D., Danilewsky, Andreas N. and McNally, Patrick J. ORCID: 0000-0003-2798-5121 (2014) Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages. Microelectronic Engineering, 117 . pp. 48-56. ISSN 0167-9317

2012

Wong, Chiu Soon, Bennett, N.S., Galiana, B., Tejedor, P., Benedicto, M., Molina-Aldareguia, J.M. and McNally, Patrick J. ORCID: 0000-0003-2798-5121 (2012) Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques. Semiconductor Science and Technology, 27 (11). p. 115012. ISSN 0268-1242

2010

Wong, Chiu Soon, Bennett, N.S., McNally, Patrick J. ORCID: 0000-0003-2798-5121, Galiana, B., Tejedor, P., Benedicto, M., Molina-Aldareguia, J.M., Monaghan, S., Hurley, Paul K. ORCID: 0000-0001-5137-721X and Cherkaoui, K. (2010) Multi-technique characterisation of MOVPE-grown GaAs on Si. Microelectronic Engineering, 88 (4). pp. 472-475. ISSN 0167-9317

2008

Horan, Ken, Lankinen, Aapo, O'Reilly, Lisa, Bennett, N.S., McNally, Patrick J. ORCID: 0000-0003-2798-5121, Sealy, B.J., Cowern, N.E.B. and Tuomi, Tiinamaija (2008) Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B, 154-15 . pp. 118-121. ISSN 0921-5107

O'Reilly, Lisa, Horan, Ken, McNally, Patrick J. ORCID: 0000-0003-2798-5121, Bennett, N.S., Cowern, N.E.B., Lankinen, Aapo, Sealy, B.J., Gwilliam, R.M., Noakes, T.C.Q. and Bailey, P. (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials. Applied Physics Letters, 92 (23). ISSN 1077-3118

2006

Bennett, N.S., Cowern, N.E.B., Smith, A.J., Gwilliam, R.M., Sealy, B.J., O'Reilly, Lisa, McNally, Patrick J. ORCID: 0000-0003-2798-5121, Cooke, G. and Kheyrandish, H. (2006) Highly conductive Sb-doped layers in strained Si. Applied Physics Letters, 89 (18). ISSN 0003-6951