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GaAs interfacial self-cleaning by atomic layer deposition

Hinkle, C. L. and Sonnet, A. M. and Vogel, E. M. and McDonnell, Stephen and Hughes, Greg and Milojevic, M. and Lee, B. and Aguirre-Tostado, F. S. and Choi, K. J. and Kim, H. C. and Kim, J. and Wallace, R. M. (2008) GaAs interfacial self-cleaning by atomic layer deposition. Applied Physics Letters, 92 (7). 071901-1. ISSN 0003-6951

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Abstract

The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial "self-cleaning" is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements.

Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:aluminium compounds; atomic layer deposition; free energy; gallium arsenide; hafnium compounds; III-V semiconductors; oxidation; reduction (chemical); surface treatment; X-ray photoelectron spectra;
Subjects:Physical Sciences > Physics
Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.2883956
Copyright Information:© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
Funders:Science Foundation Ireland
ID Code:15591
Deposited On:03 Aug 2010 14:35 by DORAS Administrator. Last Modified 03 Aug 2010 14:35

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