Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning
Hinkle, C. L. and Milojevic, M. and Brennan, Barry and Sonnet, A. M. and Aguirre-Tostado, F. S. and Hughes, Greg and Vogel, E. M. and Wallace, R. M. (2009) Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning. Applied Physics Letters, 94 (16). pp. 162101-1. ISSN 0003-6951
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The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5 ≤ x ≤ 1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga2O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga2O3) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.
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