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Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning

Hinkle, C. L. and Milojevic, M. and Brennan, Barry and Sonnet, A. M. and Aguirre-Tostado, F. S. and Hughes, Greg and Vogel, E. M. and Wallace, R. M. (2009) Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning. Applied Physics Letters, 94 (16). pp. 162101-1. ISSN 0003-6951

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Abstract

The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5 ≤ x ≤ 1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga2O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga2O3) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.

Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:capacitors; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; oxidation; passivation; wide band gap semiconductors; X-ray photoelectron spectra;
Subjects:Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences
Publisher:American Institute of Physics
Official URL:http://dx.doi.org/10.1063/1.3120546
Copyright Information:© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
ID Code:15594
Deposited On:03 Aug 2010 15:00 by DORAS Administrator. Last Modified 03 Aug 2010 15:00

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