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Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

Wong, Chiu Soon and Bennett, N.S. and Galiana, B. and Tejedor, P. and Benedicto, M. and Molina-Aldareguia, J.M. and McNally, Patrick J. (2012) Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques. Semiconductor Science and Technology, 27 (11). p. 115012. ISSN 0268-1242

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The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards <111> – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM).

Item Type:Article (Published)
Uncontrolled Keywords:Surfaces; interfaces; thin films
Subjects:Engineering > Materials
Engineering > Electronic engineering
Physical Sciences > Crystallography
Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:Institute of Physics
Official URL:
Copyright Information:© 2012 IOP
Use License:This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License
Funders:European Framework Programme 7 MNT ERA-Net "ENGAGE" project, "INSPIRE" programe by Irish Government's Programme, Science Foundation Ireland's "Precision" Strategic Research Cluster (08/SRC/I1411)
ID Code:17568
Deposited On:30 Oct 2012 12:10 by Chiu Soon Wong. Last Modified 03 Nov 2016 14:47

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