Indium stability on InGaAs during atomic H surface cleaning
Aguirre-Tostado, F. S., Milojevic, M., Hinkle, C. L., Vogel, E. M., Wallace, R. M., McDonnell, Stephen and Hughes, GregORCID: 0000-0003-1310-8961
(2008)
Indium stability on InGaAs during atomic H surface cleaning.
Applied Physics Letters, 92
(17).
pp. 171906-1.
ISSN 0003-6951
Atomic H exposure of a GaAs surface at 390 °C is a relatively simple method for removing the native oxides without altering the surface stoichiometry. In-situ reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to show that this procedure applied to In0.2Ga0.8As effectively removes the native oxides resulting in an atomically clean surface. However, the bulk InGaAs stoichiometry is not preserved from this treatment. The In:Ga ratio from the substrate is found to decrease by 33%. The implications for high-mobility channel applications are discussed as the carrier mobility increases nearly linearly with the In content.
Item Type:
Article (Published)
Refereed:
Yes
Uncontrolled Keywords:
carrier mobility; gallium arsenide; III-V semiconductors; indium compounds; reflection high energy electron diffraction; stoichiometry; surface cleaning; X-ray photoelectron spectra;