Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning
Hinkle, C. L., Milojevic, M., Brennan, Barry, Sonnet, A. M., Aguirre-Tostado, F. S., Hughes, GregORCID: 0000-0003-1310-8961, Vogel, E. M. and Wallace, R. M.
(2009)
Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning.
Applied Physics Letters, 94
(16).
pp. 162101-1.
ISSN 0003-6951
The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5 ≤ x ≤ 1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga2O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga2O3) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.
Item Type:
Article (Published)
Refereed:
Yes
Uncontrolled Keywords:
capacitors; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; oxidation; passivation; wide band gap semiconductors; X-ray photoelectron spectra;