Anomalous behavior of the near-threshold photoionization cross section of the neon isoelectronic sequence: a combined experimental and theoretical study
Chakraborty, H., Gray, Andrew, Costello, John T.ORCID: 0000-0003-4677-9999, Deshmukh, P., Haque, G., Kennedy, Eugene T.ORCID: 0000-0002-0710-5281, Manson, S. and Mosnier, Jean-PaulORCID: 0000-0002-9312-1754
(1999)
Anomalous behavior of the near-threshold photoionization cross section of the neon isoelectronic sequence: a combined experimental and theoretical study.
Physical Review Letters, 83
(11).
pp. 2151-2154.
ISSN 0031-9007
We present a combined theoretical and experimental investigation of photoionization along the Ne isoelectronic sequence and show that the near-threshold behavior of the cross section for Si4+ differs radically from the nearby ions in the sequence. We demonstrate that the general nature of the underlying physics implies that dramatic changes in near-threshold behavior may be expected for many other ions.