Folliot, H., Lynch, Michael, Bradley, Ann Louise 
ORCID: 0000-0002-9399-8628, Dunbar, L.A., Hegarty, J., Donegan, John Francis ORCID: 0000-0002-5240-1434, Barry, Liam P. ORCID: 0000-0001-8366-4790, Roberts, J.S. and Hill, G.
(2002)
Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities.
Applied Physics Letters, 80
(8).
pp. 1328-1330.
ISSN 0003-6951
Abstract
We report on two-photon absorption (TPA) photocurrent in semiconductor microcavities. We experimentally show a substantial increase in the TPA photocurrent generated, at resonance, in a GaAlAs/GaAs microcavity designed for TPA operation at ~890 nm. An enhancement factor of ~12 000 of the photocurrent is obtained via the microcavity effect, which could have an important impact on the use of TPA devices for high speed switching and sampling applications. Our results also show the implications of the cavity photon lifetime on autocorrelation traces measured using TPA in semiconductor microcavities.
Metadata
| Item Type: | Article (Published) |
|---|---|
| Refereed: | Yes |
| Subjects: | Engineering > Optical communication Physical Sciences > Semiconductors |
| DCU Faculties and Centres: | DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering Research Institutes and Centres > Research Institute for Networks and Communications Engineering (RINCE) |
| Publisher: | American Institute of Physics |
| Official URL: | http://dx.doi.org/10.1063/1.1455694 |
| Copyright Information: | ©2002 American Institute of Physics. |
| Use License: | This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License |
| ID Code: | 158 |
| Deposited On: | 22 Jan 2008 by DORAS Administrator . Last Modified 28 Aug 2020 11:27 |
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