The results of a photolummescence (PL) study of indium implanted silicon are presented. When silicon implanted with indium is annealed in the temperature range 400°C to 700°C a sharp no-phonon line at 1096 6 ± 0 1 meV with an associated phonon sideband is produced in the PL spectra Usmg uniaxial stress perturbation techniques the no-phonon line is identified as an A to A transition at a centre with trigonal symmetry. The shift rates for the lme under stress are found to be nonlinear, indicating that some mteraction with a nearby excited state is occurring. Transitions from this state are not directly observed Evidence suggests that the luminescence arises from the recombmation of excitons bound to an electrically neutral indium-implantation damage related centre, and that these exciton states are conduction band associated or donor-like in nature. This centre is shown to be similar to one of three defects observed by Wichert et al [1], usmg the perturbed angular correlation (PAC) spectroscopy technique, in silicon implanted with the radioactive indium isotope, indium-111. The benefits of PL as a complementary technique to PAC and other nuclear techniques, and of radioactive implants to PL spectroscopy, are briefly outlined.