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Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's

McNally, Patrick J. orcid logoORCID: 0000-0003-2798-5121, Tuomi, Tiinamaija, Herbert, P.A.F., Baric, Adrijan, Äyräs, P., Karilahti, M., Lipsanen, H. and Tromby, M. (1996) Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's. IEEE Transactions on Electron Devices, 43 (7). pp. 1085-1091. ISSN 1085-1091

Synchrotron X-Ray Topography (SXRT) has been uniquely applied to nondestructively reveal and evaluate the damage throughout the depth of the wafer, caused by the deposition of source/gate/drain metallization and of so-called “passivation” dielectric layers on power Al ₀.₂₂Ga₀.₇₈As/In₀.₂₁Ga₀.₇₉As pseudomorphic HEMT's. Device metallization is visible due to the stress imposed on the underlying substrate and is detected as a strain field by SXRT. Experimental results are in good agreement with simulation. The quality and detail of the initial control topographs disappear when the Si₃N₄ dielectric layer is deposited. This is believed due to the passivating layer introducing such strain into the crystal that it overwhelms the metallization strain, in addition to producing a significant amount of stress-induced defect and dislocation generation
Item Type:Article (Published)
Subjects:Engineering > Electronics
Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Institutes and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:Institute of Electrical and Electronics Engineers
Official URL:http://dx.doi.org/10.1109/16.502419
Copyright Information:Copyright © 1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
ID Code:193
Deposited On:06 Feb 2008 by DORAS Administrator . Last Modified 29 Sep 2021 13:31

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