This work describes the development of a facility for the spatial and spectral analysis of semiconductor wafers at cryogenic temperatures using photoluminescence (PL). Wafers of up to 50mm in diameter can be placed in the custom-designed cryostat and held at any temperature between 2 and 300K. A scanning optical table is used to scan the excitation beam across the wafer and collect the resulting PL signal. The spatial resolution of this arrangement was verified as 600(.im. Spectral analysis of the wafer is achieved using a CCD detector mounted on a grating spectrograph. Two separate detector/spectrograph systems were used during this project, both of which are described and compared. The maximum spectral resolution achieved was lnm at wavelengths in the range 800 to lOOOnm. From the spectral information such images as the peak intensity, peak wavelength and the full width at half maximum can be obtained. Several examples of peak wavelength and peak intensity maps of epilayer and quantum well structures grown on GaAs wafers recorded at room, liquid nitrogen and liquid helium temperatures are presented.