Cullen, Joseph, Byrne, Daragh 
ORCID: 0000-0002-2040-9765, Johnston, K., McGlynn, Enda ORCID: 0000-0002-3412-9035 and Henry, Martin O.
(2013)
Chemical identification of luminescence due to Sn and Sb in ZnO.
Applied Physics Letters, 102
(19).
p. 192110.
ISSN 1077-3118
Abstract
We show that the I10 line in ZnO photoluminescence is associated with Sn impurities. The evidence comes from material implanted with radioactive 117Ag, which decays through 117Cd and 117In to stable 117Sn, and 121Ag which decays through the same chain to stable 121Sb. Supporting evidence is provided by ZnO:Sn prepared by the in-diffusion of stable Sn. The I2 and I9 lines are also shown conclusively to be due to In, confirming earlier identifications in the literature. We also observe shallow bound exciton emission at 3.3643(3) eV due to Sb impurities produced at the end of the decay chain of 121Ag.
Metadata
| Item Type: | Article (Published) |
|---|---|
| Refereed: | Yes |
| Uncontrolled Keywords: | Photoluminescence; Zinc; Annealing |
| Subjects: | Physical Sciences > Physics Physical Sciences > Photonics Physical Sciences > Semiconductors |
| DCU Faculties and Centres: | Research Institutes and Centres > National Centre for Plasma Science and Technology (NCPST) DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences |
| Publisher: | American Institute of Physics |
| Official URL: | http://dx.doi.org/10.1063/1.4807288 |
| Copyright Information: | © 2013 AIP |
| Use License: | This item is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 3.0 License. View License |
| ID Code: | 19600 |
| Deposited On: | 23 Oct 2013 10:18 by Enda Mcglynn . Last Modified 20 Sep 2018 13:13 |
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