c-axis aligned ZnO nanorods were deposited by vapour phase transport on textured chemical bath deposited buffer layers. In this work we examine the role of the buffer layer and how it influences the vapour phase transport deposition process using both scanning and scanning transmission electron microscopes and related techniques. Vapour phase transport deposition on chemical bath deposited buffer is a complex growth process with many simultaneously effects including; (i) substantial morphological transformation at high temperature, which influences the base of the nanorods; (ii) the formation of a mixed amorphous / crystalline ZnxSi1-xOy interface during the vapour phase transport growth on silicon substrates; (iii) the overgrowth of the ZnO seed layers, by the silica interface rendering them inactive for nanorod nucleation, suggesting there is a minimum critical thickness ZnO buffer layer necessary for vapour phase transport growth of ZnO nanorods on silicon substrates. We discuss the relative importance of these effects on the overall growth process and use this understanding to explain previous results in the literature.