We demonstrate a polymer brush assisted approach for the fabrication of continuous zirconium oxide (ZrO2) films over large areas with high uniformity (pin-hole free) on copper (Cu) substrates. This approach involves the use of a thiol-terminated polymethyl methacrylate brush (PMMA-SH) as the template layer for the selective infiltration of zirconium oxynitrate (ZrN2O7). The preparation of a highly uniform covalently grafted polymer monolayer on the Cu substrate is the critical factor in fabricating a metal oxide film of uniform thickness across the surface. Infiltration is reliant on the chemical interactions between the polymer functional group and the metal precursor. A following reductive H2 plasma treatment process results in ZrO2 film formation whilst the surface Cu2O passive oxide layer was reduced to a Cu/Cu2O interface. Fundamental analysis of the infiltration process and the resulting ZrO2 film was determined by XPS, and GA-FTIR. Results derived from these techniques confirm the inclusion of the ZrN2O7 into the polymer films. Cross-sectional transmission electron microscopy and energy dispersive X-ray mapping analysis corroborate the formation of ZrO2 layer at Cu substrate. We believe that this quick and facile methodology to prepare ZrO2 films is potentially scalable to other high-κ dielectric materials of high interest in microelectronic applications.