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Threshold fluences for conditioning, fatigue and damage effects of DKDP crystals

Li, Yaguo, Zhu, Dexing, Zhang, Qinghua and Brabazon, Dermot orcid logoORCID: 0000-0003-3214-6381 (2019) Threshold fluences for conditioning, fatigue and damage effects of DKDP crystals. Optical Materials, 91 . pp. 199-204. ISSN 0925-3467

Abstract
Conditioning, fatigue and damage characteristics on the surface of DKDP nonlinear optical crystals were studied under the irradiation of 1064 nm (1ω) and 355 nm (3ω) lasers. Conditioning takes effect as laser fluence reaches the lower limit of conditioning, 6∼8 J/cm2 and 4∼6 J/cm2 for 1064 nm and 355 nm in our experiments, respectively; further increase in laser fluence will induce fatigue effects when fluence exceeds the “safe” fluence, ∼10 J/cm2 and ∼8 J/cm2 for 1064 nm and 355 nm laser light in the experiments; 1-on-1 damage will take place if fluence is sufficiently high, > 17 J/cm2 (1064 nm) and 11 J/cm2 (355 nm) in our cases. In the conditioning regime, greater fluence will result in more damage-resistant DKDP surface and increasing the number of con- ditioning laser pulses will have similar influence on damage resistance of DKDP surface. When the laser fluence falls into the band of fatigue effects, the laser induced damage threshold (LIDT) drops with increasing pulse number of conditioning laser incident on DKDP surface and finally stabilizes at a certain value, “safe” fluence, below which DKDP surface cannot be damaged macroscopically even if a myriad of laser pulses shoot the DKDP surface. The “safe” fluence is usually 60%∼80% of 1-on-1 LIDT. Our work will be beneficial to optimization of laser conditioning and to provide insights into laser-induced damage in DKDP crystals.
Metadata
Item Type:Article (Published)
Refereed:Yes
Uncontrolled Keywords:DKDP; Laser conditioning; Fatigue effect; Fatigue effect; Laser induced damage
Subjects:UNSPECIFIED
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Mechanical and Manufacturing Engineering
Research Institutes and Centres > Advanced Processing Technology Research Centre (APTRC)
Publisher:Elsevier
Official URL:https://doi.org/10.1016/j.optmat.2019.03.028
Copyright Information:© 2019 Elsevier
Funders:Science Challenge Project (JCKY2016212A506-0503), Foundation for the Development of Science & Technology of China Academy of Engineering Physics(2015B0203032), National Natural Science Foundation of China (51505444), Outstanding Youth Talents Project (2017-JCJQ-ZQ-024), Foundation for Youth Talents of LFRC, CAEP (LFRC-PD012), Funding for Scientific Research Activities of Chinese Returnees
ID Code:29201
Deposited On:24 Nov 2023 11:25 by Thomas Murtagh . Last Modified 24 Nov 2023 11:25
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