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A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior

Baric, Adrijan and McNally, Patrick J. (1998) A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior. IEEE Transactions on Education, 41 (3). pp. 219-223. ISSN 0018-9359

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The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action. The authors consider here a simple one-dimensional (1-D) model for GaAs MESFETs, which avoids more confusing numerical modeling schemes, yet still facilitates an analysis of the physical functionality of the device. The model takes into account current saturation due to either velocity saturation or channel pinch-off, the modulation of effective gate length and the series resistance of the regions beyond the gate. The results of the model have been compared to experimental data readily obtained from the literature, and the agreement has been shown to be good

Item Type:Article (Published)
Uncontrolled Keywords:Gallium arsenide (GaAs) modeling; I–V characteristics; metal–semiconductor field-effect transistor (MESFET);
Subjects:Engineering > Electronics
Physical Sciences > Semiconductors
DCU Faculties and Centres:DCU Faculties and Schools > Faculty of Engineering and Computing > School of Electronic Engineering
Research Initiatives and Centres > Research Institute for Networks and Communications Engineering (RINCE)
Publisher:Institute of Electrical and Electronics Engineers
Official URL:
Copyright Information:Copyright © 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
ID Code:192
Deposited On:06 Feb 2008 by DORAS Administrator. Last Modified 04 Jan 2017 13:59

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