O'Connor, Robert 
ORCID: 0000-0001-5794-6188, Hughes, Greg ORCID: 0000-0003-1310-8961, Kauerauf, Thomas and Ragnarsson, Lars-Ake
(2010)
Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS.
In: 2010 IEEE International Reliability Physics Symposium, 2-6 May 2010, Anaheim, CA, USA.
ISBN 978-1-4244-5430-3
Abstract
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage.
Metadata
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Event Type: | Conference |
| Refereed: | Yes |
| Uncontrolled Keywords: | CMOS reliability; hafnium oxide; high-k dielectric; stress induced leakage current; time dependent dielectric breakdown; |
| Subjects: | Physical Sciences > Physics |
| DCU Faculties and Centres: | DCU Faculties and Schools > Faculty of Science and Health > School of Physical Sciences |
| Published in: | Proceedings of the 2010 IEEE International Reliability Physics Symposium. . Institute of Electrical and Electronics Engineers. ISBN 978-1-4244-5430-3 |
| Publisher: | Institute of Electrical and Electronics Engineers |
| Official URL: | http://dx.doi.org/10.1109/IRPS.2010.5488730 |
| Copyright Information: | ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Funders: | Irish Research Council for Science Engineering and Technology, Science Foundation Ireland |
| ID Code: | 15578 |
| Deposited On: | 28 Jul 2010 11:26 by DORAS Administrator . Last Modified 28 Nov 2023 12:24 |
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