Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
Hinkle, C. L., Sonnet, A. M., Vogel, E. M., McDonnell, Stephen, Hughes, GregORCID: 0000-0003-1310-8961, Milojevic, M., Lee, B., Aguirre-Tostado, F. S., Choi, K. J., Kim, J. and Wallace, R. M.
(2007)
Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation.
Applied Physics Letters, 91
(16).
pp. 163512-1.
ISSN 0003-6951
The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion. In situ deposition and analysis techniques were used to study different surface preparations, including NH4OH, Si-flux, and atomic hydrogen exposures, as well as Si passivation depositions prior to in situ atomic layer deposition of Al2O3. As–O bonding was removed and a bond conversion process with Si deposition is observed. The accumulation capacitance frequency dispersion was removed only when a Si interlayer and a specific surface clean were combined.