The integrated circuit (IC) and the vast number of transistors that each one contains has revolutionised how humanity lives in the 21st century. Key to the near constant progress in modern electronics is the photolithography process of ‘top down’ patterning an IC with the use of light, interconnecting the millions of transistors together so that the device can perform a rich variety of roles. However, the increasing demand for faster, more efficient technology while ensuring costs are kept to a minimum, has caused photolithography to fast approach its technological and financial limitations. Research into ‘bottom-up’ methods as an alternative to photolithography for next-generation electronic devices has led to major efforts in identifying suitable polymers for area selective deposition (ASD) and block copolymer (BCP) lithography. These patterning approaches rely on a selfassembled surface containing ‘active’ or ‘inactive’ polymer regions. When the sample is exposed to a metal in solvent or chemical-precursor form, the solvent/precursor will either be incorporated or rejected by the active or inactive polymers, respectively. Subsequent polymer removal can be achieved through an oxygen rich process, leaving a metal oxide patterned in such a way that imitates the original morphology of the polymer structure to which the metal was exposed. This work focuses on developing and characterising metal infiltration techniques into various polymers that have shown the capability to be used in ASD and BCP sectors. Both liquid and vapor infiltration processes are investigated using X-ray photoelectron spectroscopy as the core analysis method, alongside techniques such as atomic force microscopy, transmission electron microscopy, ellipsometry and thin film electrical measurements.